Cree has announced the introduction of second-generation silicon carbide MOSFET devices. Cree's new silicon carbide MOSFET devices enable higher system efficiency and smaller system size than comparable silicon-based systems.
The new Cree 1200V MOSFET devices deliver industry-leading power density and conversion efficiency at 50% per ampere. Higher cost performance allows new silicon carbide MOSFET devices to bring lower system cost to OEMs, and saves end users by reducing the size and weight of SiC-based systems to increase efficiency and reduce installation costs Additional charges.
Professor Bruno Burger, a well-known industry expert at the Fraunhofer Institute in Freiburg, Germany, said: "We have evaluated Cree's second-generation silicon carbide MOSFET devices in our new advanced solar circuits. Cree's products have top-level efficiency and can be Allows the system to operate at higher switching frequencies, enabling smaller passive components, especially smaller reactors. This will fundamentally increase the price/performance of solar inverters, resulting in smaller, lighter and more efficient system."
The outstanding performance of the new silicon carbide MOSFET devices can reduce the current rating of 50%-70% of power devices in some high power applications. With proper optimization, customers can get the system performance benefits of silicon carbide devices at comparable or even lower cost to silicon device solutions. For solar inverters and uninterruptible power supply (UPS) systems, performance gains are accompanied by a reduction in size and weight. In motor drive applications, more than double the power density while increasing efficiency, providing up to twice the output torque compared to silicon devices. The product coverage has been extended to 25 mΩ chips, targeting more than 30 KW power module market. The 80 mΩ device is targeted as an upgrade to the first generation of MOSFET devices to deliver higher performance at a lower cost.
Cengiz Balkas, vice president and general manager of Cree Power & RF Devices, said: "Based on Cree's new MOSFET platform, we have achieved success in several market segments. Due to the rapid acceptance of second-generation silicon carbide MOSFET devices, we are currently We can give customers some products in advance, and we are also accelerating mass production to meet customer needs."
A 25 mΩ die provides 50 A units for high power modules. The 80 mΩ MOSFET device is available in a TO-247 package, which is higher performance and lower cost than the Cree's first-generation MOSFET CMF20120D. MOSFETs in the TO-247 package are available for immediate purchase through DigiKey, Mouser and Farnell.
The new Cree 1200V MOSFET devices deliver industry-leading power density and conversion efficiency at 50% per ampere. Higher cost performance allows new silicon carbide MOSFET devices to bring lower system cost to OEMs, and saves end users by reducing the size and weight of SiC-based systems to increase efficiency and reduce installation costs Additional charges.
Professor Bruno Burger, a well-known industry expert at the Fraunhofer Institute in Freiburg, Germany, said: "We have evaluated Cree's second-generation silicon carbide MOSFET devices in our new advanced solar circuits. Cree's products have top-level efficiency and can be Allows the system to operate at higher switching frequencies, enabling smaller passive components, especially smaller reactors. This will fundamentally increase the price/performance of solar inverters, resulting in smaller, lighter and more efficient system."
The outstanding performance of the new silicon carbide MOSFET devices can reduce the current rating of 50%-70% of power devices in some high power applications. With proper optimization, customers can get the system performance benefits of silicon carbide devices at comparable or even lower cost to silicon device solutions. For solar inverters and uninterruptible power supply (UPS) systems, performance gains are accompanied by a reduction in size and weight. In motor drive applications, more than double the power density while increasing efficiency, providing up to twice the output torque compared to silicon devices. The product coverage has been extended to 25 mΩ chips, targeting more than 30 KW power module market. The 80 mΩ device is targeted as an upgrade to the first generation of MOSFET devices to deliver higher performance at a lower cost.
Cengiz Balkas, vice president and general manager of Cree Power & RF Devices, said: "Based on Cree's new MOSFET platform, we have achieved success in several market segments. Due to the rapid acceptance of second-generation silicon carbide MOSFET devices, we are currently We can give customers some products in advance, and we are also accelerating mass production to meet customer needs."
A 25 mΩ die provides 50 A units for high power modules. The 80 mΩ MOSFET device is available in a TO-247 package, which is higher performance and lower cost than the Cree's first-generation MOSFET CMF20120D. MOSFETs in the TO-247 package are available for immediate purchase through DigiKey, Mouser and Farnell.
(This article is contributed by Cree)
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