IR's new -30V P-Channel Power MOSFETs make design simpler and more flexible

Probe domestic switch needle KG-300K needle head diameter is 3.0mm normally open switch needle

100V, 250mA, surface mount, high speed switching diode

GW MB10F 0.8A 1000V rectifier bridge

High-power led lamp beads 1W white light Sanan 30mil high power LED lamp beads imitation lumens

International Rectifier ( IR ) introduces a new family of -30 V devices using IR's latest SO-8 package P-channel MOSFET silicon components for battery charging and discharging switches. And system/load switches for DC applications. The new P-channel devices have on-resistance (RDS (on)) from 4.6 mΩ to 59 mΩ to match a wide range of power requirements. The P-channel MOSFET eliminates the need for level shifting or charge pump circuitry, making it an ideal solution for system/load switching applications.

Pan Dawei, vice president of sales for IR Asia Pacific, said: "Compared to the previous generation, this new SO-8 P-channel MOSFET series has significantly improved current handling capability, providing customers with a wide range of on-resistance options to suit their temperature and Cost requirements. At the same time, P-channel technology can also simplify circuit design."

P-channel MOSFET devices meet the first-order moisture sensitivity (MSL1) standard and are made of lead-free materials and comply with the Electronic Hazardous Substances Control Regulations (RoHS).