In recent years, topological insulator materials have attracted the attention of the scientific community due to their unique physical properties. This type of material is an insulator inside, and shows metal characteristics at the boundary or/and surface. This unique property cannot be distinguished by traditional material classification methods. Its energy band structure is characterized by Z2 topological invariants. At present, attention is focused on the preparation and transport properties of topological insulator bulk materials. In contrast, the study of topological insulator nanostructures has just begun, which is very important for the construction of new types of electronic devices. Due to the complexity of nano-preparation techniques, it is currently difficult to prepare high-quality topological insulator nanostructures experimentally.
The semiconductor material HgTe happens to be a topological insulator, and material growth and device fabrication techniques are quite mature. Under the support of the State Fund Committee and the Chinese Academy of Sciences' Innovation Engineering and Technology Department, Chang Kai, a researcher of the State Key Laboratory of Semiconductor Superlattices at the Semiconductor Research Institute and PhD student Yan Wenkai, theoretically proposed a method for preparing topological insulator HgTe quantum using semiconductor etching technology. Point program.
In a typical semiconductor quantum dot, electrons in the ground state are concentrated in the center of the quantum dot. The electronic ground state of the HgTe quantum dot is distributed near the edge of the quantum dot. This new quantum state is the result of the quantization of the edge state along the quantum dot boundary. Due to this feature, one can expect to see the Aharonov-Bohm effect in quantum dots and use this to detect the presence of edge states. At the same time, these new quantum dots are banned by optical transitions in the dipole approximation, the so-called "dark state." It may therefore be used to store quantum information.
The research results were published in the "Physical Review Letters" of the internationally renowned physics journal.
The semiconductor material HgTe happens to be a topological insulator, and material growth and device fabrication techniques are quite mature. Under the support of the State Fund Committee and the Chinese Academy of Sciences' Innovation Engineering and Technology Department, Chang Kai, a researcher of the State Key Laboratory of Semiconductor Superlattices at the Semiconductor Research Institute and PhD student Yan Wenkai, theoretically proposed a method for preparing topological insulator HgTe quantum using semiconductor etching technology. Point program.
In a typical semiconductor quantum dot, electrons in the ground state are concentrated in the center of the quantum dot. The electronic ground state of the HgTe quantum dot is distributed near the edge of the quantum dot. This new quantum state is the result of the quantization of the edge state along the quantum dot boundary. Due to this feature, one can expect to see the Aharonov-Bohm effect in quantum dots and use this to detect the presence of edge states. At the same time, these new quantum dots are banned by optical transitions in the dipole approximation, the so-called "dark state." It may therefore be used to store quantum information.
The research results were published in the "Physical Review Letters" of the internationally renowned physics journal.
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